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N25S830HAS22I Datasheet(PDF) 9 Page - ON Semiconductor |
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N25S830HAS22I Datasheet(HTML) 9 Page - ON Semiconductor |
9 / 12 page N25S830HA www.onsemi.com 9 CS Instruction SI 04 3 25 16 9 810 7 11 SCK 15 14 13 12 21 0 7 65 4 3 21 0 High−Z 16−bit address Data In to ADDR 1 SO 21 23 22 24 28 29 30 31 26 27 25 000 0 00 1 0 7 654 3 21 0 Data In to ADDR 2 7 6 543 210 7 65 43 21 0 ... 32 34 33 35 39 40 41 42 37 38 36 43 45 44 46 47 ADDR 1 Data In to ADDR 3 Data In to ADDR n High−Z Figure 11. Page and Burst WRITE Sequence 16−bit address Page address (X) Word address (Y) Page X Word Y Page X Word Y+2 Page X Word Y+1 Page X Word 31 Page X Word 0 Page X Word 1 SI SO Data Words: sequential, at the end of the page the address wraps back to the beginning of the page High−Z Figure 12. Page WRITE Sequence Page X Word Y Page X Word 31 Page X Word Y+1 Page X+1 Word 0 Page X+2 Word 0 Page X+2 Word 1 SI SO 16−bit address Page address (X) Word address (Y) Data Words: sequential, at the end of the page the address wraps to the beginning of the page and continues incrementing up to the starting word address. At that time, the address increments to the next page and the burst continues. . . . Page X+1 Word 1 . . . Page X+1 Word 31 High−Z Figure 13. Burst WRITE Sequence |
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