SI6981DQ_16 datasheet(1/6 Pages) VISHAY

Part #	SI6981DQ

Description	Dual P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si6981DQ

Document Number: 72226

S-81221-Rev. B, 02-Jun-08

www.vishay.com

1

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free

• TrenchFET® Power MOSFETs

APPLICATIONS

•

Load Switch

•

Battery Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 20

0.031 at VGS = - 4.5 V

- 4.8

0.041 at VGS = - 2.5 V

- 4.2

0.058 at VGS = - 1.8 V

- 3.5

Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

S1

G1

1

2

3

4

8

7

6

5

D2

S2

G2

TSSOP-8

Top View

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 4.8

- 4.1

A

TA = 70 °C

- 3.9

- 3.2

Pulsed Drain Current (10 µs Pulse Width)

IDM

- 30

Continuous Source Current (Diode Conduction)a

IS

- 1.0

- 0.7

Maximum Power Dissipationa

TA = 25 °C

PD

1.14

0.83

W

TA = 70 °C

0.73

0.53

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

86

110

°C/W

Steady State

124

150

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

59

75

RoHS

COMPLIANT

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