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PBSS5350X Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PBSS5350X
Description  50 V, 3 A PNP low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS5350X Datasheet(HTML) 2 Page - NXP Semiconductors

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2003 Nov 21
2
Philips Semiconductors
Product specification
50 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5350X
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4350X.
MARKING
TYPE NUMBER
MARKING CODE
PBSS5350X
S46
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
handbook, halfpage
123
Bottom view
MAM297
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−50
V
IC
collector current (DC)
−3A
ICM
peak collector current
−5A
RCEsat
equivalent on-resistance
135
m


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