NTD20P06LG datasheet(1/7 Pages) ONSEMI

Part #	NTD20P06LG

Description	Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2011 − Rev. 6

1

Publication Order Number:

NTD20P06L/D

NTD20P06L, NTDV20P06L

Power MOSFET

−60 V, −15.5 A, Single P−Channel, DPAK

Features

• Withstands High Energy in Avalanche and Commutation Modes

• Low Gate Charge for Fast Switching

• AEC Q101 Qualified − NTDV20P06L

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Bridge Circuits

• Power Supplies, Power Motor Controls

• DC−DC Conversion

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−60

V

Gate−to−Source

Voltage

Continuous

VGS

$20

V

Non−Repetitive tp v10 ms

VGSM

$30

Continuous

Drain Current

(Note 1)

Steady State

TA = 25°C

ID

−15.5

A

Power Dissipa-

tion (Note 1)

Steady State

TA = 25°C

PD

65

W

Pulsed Drain

Current

tp = 10 ms

IDM

$50

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

175

°C

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A,

L = 2.7 mH, RG = 25 W)

EAS

304

mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Case (Drain)

RqJC

2.3

°C/W

Junction−to−Ambient – Steady State (Note 1)

RqJA

80

Junction−to−Ambient – Steady State (Note 2)

RqJA

110

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size

(Cu area = 1.127 in sq. [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.412 in sq.)

P−Channel

D

S

G

1

Gate

3

Source

2

Drain

4

Drain

DPAK

CASE 369C

STYLE 2

MARKING DIAGRAMS

20P06L

Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1 2

3

4

1

Gate

3

Source

2

Drain

4

Drain

IPAK/DPAK

CASE 369D

STYLE 2

1

2

3

4

−60 V

130 mW @ −5.0 V

ID MAX

(Note 1)

V(BR)DSS

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

RDS(on) TYP

−15.5 A

http://onsemi.com

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