IPA028N08N3G datasheet(3/9 Pages) INFINEON

Part #	IPA028N08N3G

Description	OptiMOS(TM)3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPA028N08N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

10700

14200 pF

Output capacitance

C oss

-

2890

3840

Reverse transfer capacitance

C rss

-

100

-

Turn-on delay time

t d(on)

-

30

-

ns

Rise time

t r

-

59

-

Turn-off delay time

t d(off)

-

77

-

Fall time

t f

-

26

-

Gate Charge Characteristics

5)

Gate to source charge

Q gs

-

50

-

nC

Gate to drain charge

Q gd

-

30

-

Switching charge

Q sw

-

50

-

Gate charge total

Q g

-

155

206

Gate plateau voltage

V plateau

-

4.6

-

V

Output charge

Q oss

V DD=40 V, V GS=0 V

-

210

279

nC

Reverse Diode

Diode continous forward current

I S

-

89

A

Diode pulse current

I S,pulse

-

356

Diode forward voltage

V SD

V GS=0 V, I F=89 A,

T j=25 °C

-

0.9

1.2

V

Reverse recovery time

t rr

-

78

-

ns

Reverse recovery charge

Q rr

-

181

-

nC

5) See figure 16 for gate charge parameter definition

V R=40 V, I F=I S,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=40 V,

f =1 MHz

V DD=40 V, V GS=10 V,

I D=89 A, R G,ext=1.6 W

V DD=40 V, I D=89 A,

V GS=0 to 10 V

Rev. 2.1

page 3

2013-08-26

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IPA028N08N3G Datasheet(PDF) 3 Page - Infineon Technologies AG

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