IPA50R190CE_16 datasheet(3/13 Pages) INFINEON

Part #	IPA50R190CE

Description	500V CoolMOS짧 CE Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3

500VCoolMOSªCEPowerTransistor

IPA50R190CE

Rev.2.4,2016-07-12

Final Data Sheet

1Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

24.8

15.7

A

TC = 25°C

TC = 100°C

Pulsed drain current

2)

ID,pulse

-

63

A

TC=25°C

Avalanche energy, single pulse

EAS

-

339

mJ

ID =7.7A; VDD = 50V

Avalanche energy, repetitive

EAR

-

0.51

mJ

ID =7.7A; VDD = 50V

Avalanche current, repetitive

IAR

-

7.7

A

-

MOSFET dv/dt ruggedness

dv/dt

-

50

V/ns

VDS=0...400V

Gate source voltage

VGS

-20

-30

-

20

30

V

static;

AC (f>1 Hz)

Power dissipation (Full PAK)

Ptot

-

32

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-40

-

150

°C

-

Mounting torque

-

50

Ncm

M2.5 screws

Continuous diode forward current

IS

-

8.1

A

TC=25°C

Diode pulse current

2)

IS,pulse

-

63.0

A

TC = 25°C

Reverse diode dv/dt

3)

dv/dt

-

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C,

tcond<2

µs

Maximum diode commutation speed

3)

dif/dt

-

500

A/

µs VDS=0...400V,ISD<=IS,Tj=25°C,

tcond<2

µs

Insulation withstand voltage for

TO-220FP

VISO

-

2500

V

Vrms,TC=25°C,t=1min

2Thermalcharacteristics

Table3ThermalcharacteristicsTO-220FullPAK

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case

RthJC

-

3.9

°C/W -

Thermal resistance, junction - ambient

RthJA

-

80

°C/W leaded

Soldering temperature, wavesoldering

only allowed at leads

Tsold

-

260

°C

1.6mm (0.063 in.) from case for 10s

1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent

2) Pulse width tp limited by Tj,max

3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

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