IPI60R190C6 datasheet(4/19 Pages) INFINEON

Part #	IPI60R190C6

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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600V CoolMOSTM C6 Power Transistor

IPx60R190C6

Maximum ratings

2

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current

1)

ID

-

20.2

A

TC

= 25 °C

12.8

TC= 100°C

Pulsed drain current

2)

ID,pulse

-

59

A

TC=25 °C

Avalanche energy, single pulse

EAS

-

418

mJ

ID

=3.4 A,VDD=50 V

(see table 21)

Avalanche energy, repetitive

EAR

-

0.63

ID

=3.4 A,VDD=50 V

Avalanche current, repetitive

IAR

-

3.4

A

MOSFET dv/dt ruggedness

dv/dt

-

50

V/ns

VDS=0...480 V

Gate source voltage

VGS

- 20

-

20

V

static

- 30

30

AC (f>1 Hz)

Power dissipation for

TO-220, TO-247, TO-262, TO-263

Ptot

-

151

W

TC

=25 °C

Power dissipation for

TO-220 FullPAK

Ptot

-

34

Operating and storage temperature

Tj

,Tstg

- 55

-

150

°C

Mounting torque

TO-220, TO-247

-

60

Ncm

M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

50

M2.5 screws

Continuous diode forward current

IS

-

17.5

A

TC

=25 °C

Diode pulse current

2)

IS,pulse

-

59

A

TC

=25 °C

Reverse diode dv/dt

3)

dv/dt

-

15

V/ns VDS=0...400 V,ISD

& ID,

Tj

=25 °C

(see table 22)

Maximum diode

commutation speed

3)

dif/dt

-

500

A/µs

Insulation withstand voltage

TO-220 FullPAK

VISO

-

2500

V

VRMS, TC =25 °C, t = 1 min

1) Limited by Tj,max. Maximum duty cycle D=0.75

2) Pulse widthtp limited by Tj,max

3) Identical low side and high side switch with identical RG

Final Data Sheet

4

Rev. 2.2, 2014-12-02

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IPI60R190C6 Datasheet(PDF) 4 Page - Infineon Technologies AG

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