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IPB60R190C6 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPB60R190C6 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 19 page 600V CoolMOS" C6 Power Transistor IPx60R190C6 Electrical characteristics Final Data Sheet 7 Rev. 2.2, 2014-12-02 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 7.6 - nC VDD=480 V, ID=9.5A, VGS=0 to 10 V Gate to drain charge Qgd - 32 - Gate charge total Qg - 63 - Gate plateau voltage Vplateau - 5.4 - V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=9.5A, Tj=25 °C Reverse recovery time trr - 430 - ns VR=400 V, IF=9.5A, di F/dt=100 A/µs (see table 22) Reverse recovery charge Qrr - 6.9 - µC Peak reverse recovery current Irrm - 30 - A |
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