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IPS60R400CE Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPS60R400CE Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 17 page  6 600VCoolMOSªCEPowerTransistor IPD60R400CE,IPS60R400CE,IPA60R400CE Rev.2.2,2016-08-08 Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=4.8A,Tj=25°C Reverse recovery time trr - 290 - ns VR=400V,IF=4.8A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 3.3 - µC VR=400V,IF=4.8A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 21 - A VR=400V,IF=4.8A,diF/dt=100A/µs; see table 9 |
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