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IPA65R225C7 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPA65R225C7
Description  Metal Oxide Semiconductor Field Effect Transistor
Download  15 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPA65R225C7 Datasheet(HTML) 6 Page - Infineon Technologies AG

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6
650VCoolMOS™C7PowerTransistor
IPA65R225C7
Rev.2.0,2013-10-22
Final Data Sheet
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
650
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
V(GS)th
3
3.5
4
V
VDS=VGS,ID=0.24mA
Zero gate voltage drain current
IDSS
-
-
-
10
1
-
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
Gate-source leakage current
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
0.199
0.478
0.225
-
VGS=10V,ID=4.8A,Tj=25°C
VGS=10V,ID=4.8A,Tj=150°C
Gate resistance
RG
-
1.2
-
f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
996
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
14
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related
1)
Co(er)
-
29
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time related
2)
Co(tr)
-
313
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
9
-
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=10
Ω;seetable9
Rise time
tr
-
6
-
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=10
Ω;seetable9
Turn-off delay time
td(off)
-
48
-
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=10
Ω;seetable9
Fall time
tf
-
10
-
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=10
Ω;seetable9
Table6Gatechargecharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
5
-
nC
VDD=400V,ID=4.8A,VGS=0to10V
Gate to drain charge
Qgd
-
6
-
nC
VDD=400V,ID=4.8A,VGS=0to10V
Gate charge total
Qg
-
20
-
nC
VDD=400V,ID=4.8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=400V,ID=4.8A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V


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