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EP7312-EV-C Datasheet(PDF) 10 Page - Cirrus Logic |
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EP7312-EV-C Datasheet(HTML) 10 Page - Cirrus Logic |
10 / 54 page 10 ©Copyright Cirrus Logic, Inc. 2003 (All Rights Reserved) DS506PP1 EP7311 High-Performance, Low-Power System on Chip ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings Recommended Operating Conditions DC Characteristics All characteristics are specified at VDDCORE =2.5 V, VDDIO =3.3 V and VSS = 0 V over an operating temperature of 0°C to +70°C for all frequencies of operation. The current consumption figures have test conditions specified per parameter.” DC Core, PLL, and RTC Supply Voltage 2.9 V DC I/O Supply Voltage (Pad Ring) 3.6 V DC Pad Input Current ±10 mA/pin; ±100 mA cumulative Storage Temperature, No Power –40 °C to +125°C DC core, PLL, and RTC Supply Voltage 2.5 V ± 0.2 V DC I/O Supply Voltage (Pad Ring) 2.3 V - 3.5 V DC Input / Output Voltage O–I/O supply voltage Operating Temperature Extended -20 °C to +70°C; Commercial 0°C to +70°C; Industrial -40 °C to +85°C Symbol Parameter Min Typ Max Unit Conditions VIH CMOS input high voltage 0.65 × VDDIO - VDDIO + 0.3 V VDDIO = 2.5 V VIL CMOS input low voltage VSS − 0.3 - 0.25 × V DDIO V VDDIO = 2.5 V VT+ Schmitt trigger positive going threshold -- 2.1 V VT- Schmitt trigger negative going threshold 0.8 - - V Vhst Schmitt trigger hysteresis 0.1 - 0.4 V VIL to VIH VOH CMOS output high voltagea Output drive 1 a Output drive 2a VDD – 0.2 2.5 2.5 - - - - - - V V V IOH = 0.1 mA IOH = 4 mA IOH = 12 mA VOL CMOS output low voltagea Output drive 1a Output drive 2 a - - - - - - 0.3 0.5 0.5 V V V IOL = –0.1 mA IOL = –4mA IOL = –12 mA IIN Input leakage current - - 1.0 µA VIN = VDD or GND IOZ Bidirectional 3-state leakage currentb c 25 - 100 µA VOUT = VDD or GND CIN Input capacitance 8 - 10.0 pF |
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