IKW40N120T2_14 datasheet(9/15 Pages) INFINEON

Part #	IKW40N120T2

Description	IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW40N120T2

TrenchStop

® 2nd Generation Series

IFAG IPC TD VLS

9

Rev. 2.4

23.09.2014

0nC

50nC

100nC

150nC

0V

5V

10V

15V

960V

240V

0V

10V

20V

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC=40 A)

Figure 18. Typical capacitance as a function of

collector-emitter voltage

(VGE=0V, f = 1 MHz)

12V

14V

16V

18V

0µs

5µs

10µs

15µs

12V

14V

16V

18V

0A

100A

200A

300A

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ  175°C)

Figure 20. Typical short circuit collector

current as a function of gate-emitter

voltage

(VCE  600V, Tj,start = 175C)

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IKW40N120T2 Datasheet(PDF) 9 Page - Infineon Technologies AG

IKW40N120T2 Datasheet(HTML) 9 Page - Infineon Technologies AG

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