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N84C163WD30TG Datasheet(PDF) 3 Page - ON Semiconductor |
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N84C163WD30TG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 11 page N84C163 www.onsemi.com 3 SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Temperature Under Bias –55 to +125 °C Storage Temperature –65 to +150 °C Voltage on any Pin with Respect to Ground (Note 1) −2.0 to VCC + 2.0 V VCC with Respect to Ground −2.0 to 7.0 V Package Power Dissipation Capability (TA = 25°C) 1.0 W Lead Soldering Temperature (10 seconds) 300 °C Output Short Circuit Current (Note 2) 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum DC voltage on output pins is VCC +0.5 V, which may overshoot to VCC +2.0 V for periods of less than 20 ns. 2. Output shorted for no more than one second. No more than one output shorted at a time. Table 3. RELIABILITY CHARACTERISTICS Symbol Parameter Reference Test Method Min Max Units NEND (Note 3) Endurance MIL−STD−883, Test Method 1033 1,000,000 Cycles/Byte TDR (Note 3) Data Retention MIL−STD−883, Test Method 1008 100 Years VZAP (Note 3) ESD Susceptibility MIL−STD−883, Test Method 3015 2000 Volts ILTH (Notes 3 & 4) Latch−Up JEDEC Standard 17 100 mA 3. This parameter is tested initially and after a design or process change that affects the parameter. 4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from –1 V to VCC +1 V. Table 4. D.C. OPERATING CHARACTERISTICS VCC = 2.7 V to 6.0 V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Units ICC:R Read Power Supply Current fSCL = 400 kHz 0.5 mA ICC:W Write Power Supply Current Write Cycle 1 mA ISB Standby Current VCC = 3.3 V 40 mA VCC = 5 V 50 mA ILI Input Leakage Current VIN = GND or VCC 2 mA ILO Output Leakage Current VIN = GND or VCC 10 mA VIL Input Low Voltage −1 VCC x 0.3 V VIH Input High Voltage VCC x 0.7 VCC + 0.5 V VOL1 Output Low Voltage (SDA) IOL = 3 mA, VCC = 3.0 V 0.4 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 5. CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5 V Symbol Test Test Conditions Max Units CI/O (Note 3) Input/Output Capacitance (SDA) VI/O = 0 V 8 pF CIN (Note 3) Input Capacitance (SCL) VIN = 0 V 6 pF |
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