CAV24C64

www.onsemi.com

2

DEVICE MARKINGS

(SOIC−8)

(TSSOP−8)

C64F

AYMXXX

C64F

= Specific Device Code

A

= Assembly Location

Y

= Production Year (Last Digit)

M

= Production Month (1-9, O, N, D)

XXX

= Last Three Digits of Assembly Lot Number

G

= Pb−Free Package

24C64F = Specific Device Code

A

= Assembly Location

Y

= Production Year (Last Digit)

M

= Production Month (1-9, O, N, D)

XXX

= Last Three Digits of Assembly Lot Number

G

= Pb−Free Package

24C64F

AYMXXX

G

G

For the location of Pin 1,

please consult the corre-

sponding package drawing.

A

= Specific Device Code

Y

= Production Year (Last Digit)

M

= Production Month (1−9, O, N, D)

A

YM

(WLCSP−4)

Table 1. ABSOLUTE MAXIMUM RATINGS

Parameters

Ratings

Units

Storage Temperature

–65 to +150

°C

Voltage on Any Pin with Respect to Ground (Note 1)

–0.5 to +6.5

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Symbol

Parameter

Min

Units

Endurance

1,000,000

Program/Erase Cycles

Data Retention

100

Years

2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100

and JEDEC test methods.

Table 3. D.C. OPERATING CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Max

Units

Read Current

1

mA

Write Current

2

mA

Standby Current

5

mA

I/O Pin Leakage

2

mA

Input Low Voltage

−0.5

V

Input High Voltage

V

SCL and SDA

5.5

Output Low Voltage

0.4

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.