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CAT25M02VE-GT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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CAT25M02VE-GT3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 14 page CAT25M02 www.onsemi.com 2 DEVICE MARKINGS SOIC−8 Package 25M02A = Specific Device Code A = Assembly Site Y = Year of Production, Last Number M = Assembly Operation Month ZZZ = Assembly Lot Number, Last Three Numbers WLCSP−8 Package 2MSA = Specific Device Code A = Assembly Site L = Wafer Lot Number Y = Year of Production, Last Number W = Work Week Number 25M02A AYMZZZ 2MSA ALYW Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature –40 to +125 °C Storage Temperature –65 to +150 °C Voltage on any Pin with Respect to Ground (Note 1) –0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS (Note 4) Symbol Parameter Min Units NEND (Notes 2, 3) Endurance 1,000,000 Program/Erase Cycles TDR Data Retention 100 Years 2. Page Mode, VCC = 5 V, 25°C. 3. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes located at addresses 4N, 4(N+1), 4(N+2), 4(N+3), in order to benefit from the maximum number of write cycles. 4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. |
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