BSS806NE datasheet(2/9 Pages) INFINEON

Part #	BSS806NE

Description	OptiMOS?? Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 9 page

BSS806NE

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - ambient

R thJA

minimal footprint

1)

-

250

K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS= 0 V, I D= 250 µA

20

-

V

Gate threshold voltage

V GS(th)

V DS=VGS , I D=11 µA

0.3

0.55

0.75

Drain-source leakage current

I DSS

V DS=20 V, V GS=0 V,

T j=25 °C

-

1

mA

V DS=20 V, V GS=0 V,

T j=150 °C

-

100

Gate-source leakage current

I GSS

V GS=8 V, V DS=0 V

-

6

µA

Drain-source on-state resistance

R DS(on)

V GS=1.8 V, I D=1.3 A

-

57

82

m

W

V GS=2.5 V, I D=2.3 A

-

41

57

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=1.9 A

9

-

S

Values

1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB.

Rev 2.01

page 2

2014-01-16

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