IKP04N60T datasheet(2/13 Pages) INFINEON

Part #	IKP04N60T

Description	IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

2 / 13 page

IKP04N60T

TRENCHSTOP

TM Series

q

IFAG IPC TD VLS

2

Rev. 2.8 17.02.2016

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R t h J C

3.5

K/W

Diode thermal resistance,

junction – case

R t h J C D

5

Thermal resistance,

junction – ambient

R t h J A

62

Electrical Characteristic, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

Static Characteristic

Collector-emitter breakdown voltage

V ( B R ) C E S

V G E = 0 V , I C = 0 . 2 m A

600

-

V

Collector-emitter saturation voltage

V C E ( s a t )

V G E = 1 5 V , I C = 4 A

T j= 2 5 ° C

T j= 1 7 5 ° C

-

1.5

1.9

2.05

-

Diode forward voltage

V F

V G E = 0 V , I F = 4 A

T j= 2 5 ° C

T j= 1 7 5 ° C

-

1.65

1.6

2.05

-

Gate-emitter threshold voltage

V G E ( t h )

I C = 6 0 µ A , V C E = V G E

4.1

4.9

5.7

Zero gate voltage collector current

I C E S

V C E = 6 0 0 V , V G E = 0 V

T j= 2 5 ° C

T j= 1 7 5 ° C

-

40

1000

µA

Gate-emitter leakage current

I G E S

V C E = 0 V , V G E = 2 0 V

-

100

nA

Transconductance

g f s

V C E = 2 0 V , I C = 4 A

-

2.2

-

S

Integrated gate resistor

R G in t

-

Ω

Dynamic Characteristic

Input capacitance

C i e s

V C E = 2 5 V ,

V G E = 0 V ,

f = 1 M H z

-

252

-

pF

Output capacitance

C o e s

-

20

-

Reverse transfer capacitance

C r e s

-

7.5

-

Gate charge

Q G a t e

V C C = 4 8 0 V , I C = 4 A

V G E = 1 5 V

-

27

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L E

-

7

-

nH

Short circuit collector current

1)

I C ( S C )

V G E = 1 5 V , t S C ≤ 5 µs

V C C = 4 0 0 V ,

T j ≤ 150° C

-

36

-

A

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Similar Part No. - IKP04N60T

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IKP04N60T	365Kb / 13P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.2 Dec-04
	IKP04N60T	566Kb / 14P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.5 Feb. 09
	IKP04N60T	566Kb / 14P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.5 Feb. 09

More results

Similar Description - IKP04N60T

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IKA06N60T	520Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 20.09.2013
	IKB20N60T	703Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 20.09.2013
	IKP06N60T	520Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 20.09.2013
	IKP20N60T	505Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.8 18.05.2015
	IKW30N60T	506Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 19.05.2015
	IKA15N60T	515Kb / 13P	IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 25.07.2016
	IKP10N60T	458Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 11.05.2015
	IKB06N60T	658Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 20.09.2013
	IKW50N60T	598Kb / 13P	IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 20.09.2013
	IKA10N60T	515Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 20.09.2013

More results

IKP04N60T Datasheet(PDF) 2 Page - Infineon Technologies AG

IKP04N60T Datasheet(HTML) 2 Page - Infineon Technologies AG

Similar Part No. - IKP04N60T

Similar Description - IKP04N60T

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL