Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IKW15N120T2 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IKW15N120T2
Description  IGBT in 2nd generation TrenchStop짰 technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW15N120T2 Datasheet(HTML) 7 Page - Infineon Technologies AG

Back Button IKW15N120T2_13 Datasheet HTML 3Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 4Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 5Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 6Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 7Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 8Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 9Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 10Page - Infineon Technologies AG IKW15N120T2_13 Datasheet HTML 11Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 15 page
background image
IKW15N120T2
TrenchStop
® 2nd generation Series
IFAG IPC TD VLS
7
Rev. 2.2
12.06.2013
7.5A
15.0A
22.5A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)






10 ns
100 ns
1000 ns
t
f
t
r
t
d(off)
t
d(on)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=41.8Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
f
t
d(on)
t
d(off)
0°C
50°C
100°C
150°C
3.5V
4.0V
4.5V
5.0V
5.5V
6.0V
6.5V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 600µA)


Similar Part No. - IKW15N120T2_13

ManufacturerPart #DatasheetDescription
logo
Infineon Technologies A...
IKW15N120T2 INFINEON-IKW15N120T2_08 Datasheet
386Kb / 15P
   Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology
Rev. 2.1 Sep 08
More results

Similar Description - IKW15N120T2_13

ManufacturerPart #DatasheetDescription
logo
Infineon Technologies A...
IKW40N120T2 INFINEON-IKW40N120T2_14 Datasheet
598Kb / 15P
   IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode
Rev. 2.4 23.09.2014
IKW25N120T2 INFINEON-IKW25N120T2_13 Datasheet
464Kb / 15P
   IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode
Rev. 2.2 12.06.2013
IKP20N60TA INFINEON-IKP20N60TA Datasheet
746Kb / 14P
   IGBT in TrenchStop짰 and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.6 12.06.2013
IKW25N120T2 INFINEON-IKW25N120T2 Datasheet
376Kb / 15P
   Low Loss DuoPack : IGBT in 2nd generation TrenchStop짰 with soft, fast recovery anti-parallel EmCon diode
Rev. 2.1 Sep 08
SKB02N120 INFINEON-SKB02N120_13 Datasheet
615Kb / 13P
   Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Rev. 2.4 12.06.2013
IHW40T60 INFINEON-IHW40T60_13 Datasheet
582Kb / 13P
   IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.1 10.12.2013
IKB06N60T INFINEON-IKB06N60T Datasheet
658Kb / 13P
   IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 20.09.2013
IKW50N60T INFINEON-IKW50N60T_13 Datasheet
598Kb / 13P
   IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.6 20.09.2013
IKA10N60T INFINEON-IKA10N60T_13 Datasheet
515Kb / 13P
   IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 20.09.2013
IKA15N60T INFINEON-IKA15N60T_13 Datasheet
570Kb / 13P
   IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.5 20.09.2013
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com