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CY7C1352F
Document #: 38-05211 Rev. *C
Page 8 of 13
ISB1
Automatic CE
Power-Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz
120
mA
4.4-ns cycle, 225 MHz
115
mA
5-ns cycle, 200 MHz
110
mA
6-ns cycle, 166 MHz
100
mA
7.5-ns cycle, 133 MHz
90
mA
10-ns cycle, 100 MHz
80
mA
ISB2
Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected,
VIN ≤ 0.3V or VIN > VDDQ – 0.3V, f
= 0
All speeds
40
mA
ISB3
Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected, or
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz
105
mA
4.4-ns cycle, 225 MHz
100
mA
5-ns cycle, 200 MHz
95
mA
6-ns cycle, 166 MHz
85
mA
7.5-ns cycle, 133 MHz
75
mA
10-ns cycle, 100 MHz
65
mA
ISB4
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
All speeds
45
mA
Shaded areas contain advance information.
Thermal Resistance[11]
Parameter
Description
Test Conditions
TQFP
Package
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
41.83
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
9.99
°C/W
Capacitance[11]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V,
VDDQ = 3.3V
5pF
CCLK
Clock Input Capacitance
5
pF
CI/O
Input/Output Capacitance
5
pF
Electrical Characteristics Over the Operating Range[9, 10] (continued)
Parameter
Description
Test Conditions
Min.
Max.
Unit
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