20N06H datasheet(2/2 Pages) CHONGQING

Part #	20N06H

Description	20A mps,60 Volts N-CHANNEL MOSFET

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Manufacturer	CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]

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Rev. 14-1

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Electrical Characteristics (Tc=25℃,unless otherwise noted)

Parameter

Symbol

Test Conditions

Mix

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,ID=250uA

60

－

V

Breakdown Temperature Coefficient

ΔBVDSS

/ΔTJ

Reference to 25℃，

ID=250uA

－

0.5

－

V/℃

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

－

1

uA

Gate-Body Leakage Current,Forward

IGSSF

VGS=20V,VDS=0V

－

100

nA

Gate-Body Leakage Current,Reverse

IGSSR

VGS=-20V,VDS=0V

－

-100

nA

On Characteristics

Gate-Source Threshold Voltage

VGS(th)

VDS=10V,ID=250uA

1.0

－

3.0

V

Drain-Source On-State Resistance

RDS(on)

VGS=10V,ID=10A

－

36

mΩ

Dynamic Characteristics

Input Capacitance

Ciss

VDS=25V,VGS=0V,

f=1.0MHZ

－

450

590

pF

Output Capacitance

Coss

－

170

220

pF

Reverse Transfer Capacitance

Crss

－

25

35

pF

Switching Characteristics

Turn-On Delay Time

td(on)

VDD=30V,ID=10A,

RG=25Ω

(Note4,5)

－

5

20

ns

Turn-On Rise Time

tr

－

45

100

ns

Turn-Off Delay Time

td(off)

－

20

50

ns

Turn-Off Fall Time

tf

－

25

60

ns

Total Gate Charge

Qg

VDS=48V,ID=20A,

VGS=10V, (Note4,5)

－

11.5

15

nC

Gate-Source Charge

Qgs

－

3

－

nC

Gate-Drain Charge

Qgd

－

4.5

－

nC

Drain-Source Body Diode Charcteristics and Maximum Ratings

Continuous Diode Forward Current

IS

－

20

A

Pulsed Diode Forward Current

ISM

－

80

A

Diode Forward Voltage

VSD

IS=20A,VGS=0V

－

1.5

V

Reverse Recovery Time

trr

VGS=0V,IS=20A,

dIF/dt=100A/us,

(Note4)

－

43

－

ns

Reverse Recovery Charge

Qrr

－

50

－

uC

Notes

1.

Repetitive Rating:pulse width limited by maximum junction temperature.

2.

VDD=10V,L=1mH,Rg=25Ω,IAS=20A , TJ=25℃.

3.

ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.

4.

Pulse width≤300us;duty cycle≤2%.

5.

Repetitive rating; pulse width limited by maximum junction temperature.

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