IGW75N60T_14 datasheet(7/12 Pages) INFINEON

Part #	IGW75N60T

Description	Low Loss IGBT: IGBT in TRENCHSTOP??and Fieldstop technology

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Manufacturer	INFINEON [Infineon Technologies AG]

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IGW75N60T

TRENCHSTOP

™ Series

q

IFAG IPC TD VLS

7

Rev. 2.6 20.09.2013

0A

20A

40A

60A

80A

100A 120A 140A

0.0mJ

4.0mJ

8.0mJ

12.0mJ

E

ts*

E

off

*) E

on and Ets include losses

due to diode recovery

E

on*









0 .0m J

2 .0m J

4 .0m J

6 .0m J

8 .0m J

E

ts*

E

off

*) E

on a n d E ts in c lu d e lo s s e s

d u e to d io d e rec o v e ry

E

on*

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, rG = 5Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 75A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C

125°C 150°C

0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

5.0mJ

E

ts*

E

off

*) E

on and Ets include losses

due to diode recovery

E

on*

300V

350V

400V

450V

500V

550V

0m J

2m J

4m J

6m J

8m J

E

ts*

E

on*

*) E

on a n d E ts in c lu d e lo s s e s

due to diode recovery

E

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 75A, rG = 5Ω,

Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 75A, rG = 5Ω,

Dynamic test circuit in Figure E)

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IGW75N60T Datasheet(PDF) 7 Page - Infineon Technologies AG

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