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BQ26200 Datasheet(PDF) 4 Page - Texas Instruments |
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BQ26200 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 18 page bq26200 SLUS509A − DECEMBER 2001 − REVISED NOVEMBER 2004 4 www.ti.com timer PARAMETER TEST CONDITIONS MIN TYP MAX UNIT R(OSC) Oscillator current coefficient 10 ppm/ Ω E(TMR) Timer accuracy error R(OSC) = 100 k (±0.1%), See Note 1 −3% 3% NOTES: 1. Timer accuracy is linearly proportional to the tolerance of R(OSC). NOTES: 2. Variation of oscillator frequency due to change in R(OSC). temperature register PARAMETER TEST CONDITIONS MIN TYP MAX UNIT T(RES) Reported temperature resolution 1 _k E(T) Reported temperature accuracy VCC = 3.6 V −3 3 _K Reported temperature drift −2 _kV VFC PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VI(SR) Input voltage: VSRP − VSRN −100 100 mV G(VFC) Charge/discharge gain TA = 25 _C, VCC = 3.6 89.2 92.2 95.2 Hz/V G(VCC) Supply voltage gain coefficient −100 mV < (V(SRP) − V(SRN)) < 100 mV 0.45 0.86 %/V Slope ( −20 _C ≤ TA ≤ 70_C) −0.03 0.02 %/ _C G(TCO) Temperature gain coefficient Total deviation ( −20 _C ≤ TA ≤ 70_C) −0.15% 0.56% G(TCO) Temperature gain coefficient Slope ( 0 _C ≤ TA ≤ 50_C) −0.03 0.03 %/ _C Total deviation ( 0 _C ≤ TA ≤ 50_C) 0.06% 0.51% INL Integrated non-linearity −100 mV < (V(SRP) − V(SRN)) < 100 mV 0.2% 0.5% V(COS) Auto compensated offset 2.8 V ≤ Vcc ≤ 4.3 V, R(OSC) = 100 K (±1%) −17.7 12.5 µV flash memory PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Data retention 5 Years Flash programming write-cycles 10,000 Cycles t(BYTEPROG) Byte programming time 90 µs t(BLCKPROG) RAM-to-flash block programming time 60 µs +30 µs/byte 1020 µs t(BLKERASE) Block-erase time 60 µs +30 µs/byte 1020 µs |
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