BSC047N08NS3G_12 datasheet(1/9 Pages) INFINEON

Part #	BSC047N08NS3G

Description	OptiMOSTM3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC047N08NS3 G

OptiMOSTM3 Power-Transistor

Features

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance RDS(on)

• Superior thermal resistance

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

1) for target applications

• Halogen-free according to IEC61249-2-21

VDS

80

V

RDS(on),max

4.7

m

Ω

ID

100

A

Product Summary

Type

BSC047N08NS3 G

Package

PG-TDSON-8

Marking

047N08NS

Rev. 2.7

page 1

2012-04-04

Maximum ratings,

at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

100

A

V GS=10 V, T C=100 °C

79

V GS=10 V, T A=25 °C,

R thJA=50 K/W

2)

18

Pulsed drain current

3)

I D,pulse

T C=25 °C

400

Avalanche energy, single pulse

4)

E AS

I D=50 A, R GS=25 Ω

310

mJ

Gate source voltage

V GS

±20

V

4) See figure 13 for more detailed information

Value

1) J-STD20 and JESD22

3) See figure 3 for more detailed information

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Type

BSC047N08NS3 G

Package

PG-TDSON-8

Marking

047N08NS

Rev. 2.7

page 1

2012-04-04

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BSC047N08NS3G Datasheet(PDF) 1 Page - Infineon Technologies AG

BSC047N08NS3G Datasheet(HTML) 1 Page - Infineon Technologies AG

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