BSC067N06LS3G_13 datasheet(6/10 Pages) INFINEON

Part #	BSC067N06LS3G

Description	OptiMOSTM3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC067N06LS3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=50 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS; I D=100 µA

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)

parameter: T j

typ

max

0

1

2

3

4

5

6

7

8

9

10

11

12

-60

-20

20

60

100

140

180

T

j [°C]

35 µA

350

mA

0

0.5

1

1.5

2

2.5

-60

-20

20

60

100

140

180

T

j [°C]

Ciss

Coss

Crss

101

102

103

104

0

20

40

60

V

DS [V]

25 °C

150 °C

25 °C, max

150 °C, max

1

10

100

1000

0.0

0.5

1.0

1.5

2.0

V

SD [V]

Rev. 2.4

page 6

2013-09-18

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BSC067N06LS3G Datasheet(PDF) 6 Page - Infineon Technologies AG

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