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BSC067N06LS3G Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSC067N06LS3G Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page BSC067N06LS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=100 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ max 0 1 2 3 4 5 6 7 8 9 10 11 12 -60 -20 20 60 100 140 180 T j [°C] 35 µA 350 mA 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 101 102 103 104 0 20 40 60 V DS [V] 25 °C 150 °C 25 °C, max 150 °C, max 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 V SD [V] Rev. 2.4 page 6 2013-09-18 |
Similar Part No. - BSC067N06LS3G_13 |
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Similar Description - BSC067N06LS3G_13 |
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