BSC110N06NS3G_13 datasheet(5/9 Pages) INFINEON

Part #	BSC110N06NS3G

Description	OptiMOSTM3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 9 page

BSC110N06NS3 G

5 Typ. output characteristics

6 Typ. drain-source on resistance

I D=f(V DS); T j=25 °C

R DS(on)=f(I D); T j=25 °C

parameter: V GS

7 Typ. transfer characteristics

8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max

g fs=f(I D); T j=25 °C

parameter: T j

5 V

5.5 V

6 V

7 V

10 V

0

2

4

6

8

10

12

14

16

18

20

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24

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28

0

50

100

150

200

I

D [A]

25 °C

150 °C

0

20

40

60

80

100

120

0

2

4

6

8

V

GS [V]

0

20

40

60

80

0

20

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100

120

I

D [A]

5 V

5.5 V

6 V

7 V

10 V

0

50

100

150

200

0

1

2

3

4

V

DS [V]

Rev.2.4

page 5

2013-05-21

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BSC110N06NS3G Datasheet(PDF) 5 Page - Infineon Technologies AG

BSC110N06NS3G Datasheet(HTML) 5 Page - Infineon Technologies AG

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