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MJD127 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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MJD127 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 3 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-1 0mA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -10 µA Collector-emitter cut-off current ICEO VCE=-50V,IB=0 -10 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA hFE(1) VCE=-4V,IC=-4A 1000 12000 DC current gain hFE(2) VCE=-4V,IC=-8A 100 VCE(sat) 1 * IC=-4A,IB=-16mA -2 V Collector-emitter saturation voltage VCE(sat) 2 * IC=-8A,IB=-80mA -4 V Base-emitter saturation voltage VBE(sat) * IC=-8A,IB=-80mA -4.5 V Base-emitter voltage VBE * VCE=-4V,IC=-4A -2.8 V Collector output capacitance Cob VCB=-10V,IE=0,f=0.1MHz 300 pF *Pulse Test: Pulse Width≤380µs, Duty Cycle≤2% TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER www.cj-elec.com 1 D,Oct,2014 |
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