IXFH75N10Q datasheet(1/2 Pages) IXYS

Part #	IXFH75N10Q

Description	HIPER FET POWER MOSFETS Q CLASS

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

TestConditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

100

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

100

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C75

A

I

DM

T

C = 25°C, pulse width limited by TJM

300

A

I

AR

T

C = 25°C75

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-247AD

6

g

TO-268

4

g

TO-247 AD (IXFH)

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

98550A (6/99)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 250 µA

100

V

GS(th)

V

DS = VGS, ID = 4 mA

2.0

4

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J =

25°C25

µA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

20 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

TO-268 (IXFT) Case Style

(TAB)

G

S

HiPerFETTM

Power MOSFETs

Q-Class

Features

l IXYS advanced low gate charge

process

l International standard packages

l Low gate charge and capacitance

- easier to drive

- faster switching

l Low R

DS (on)

l Unclamped Inductive Switching (UIS)

rated

l Molding epoxies meet UL 94 V-0

flammability classification

Advantages

l Easy to mount

l Space savings

l High power density

IXFH 75N10Q

V

DSS

= 100

V

IXFT 75N10Q

I

D25

= 75

A

R

DS(on)

= 20 mW

t

rr £ 200ns

Advanced Technical Information

N-ChannelEnhancementMode

Avalanche Rated, High dv/dt

Low Gate Charge and Capacitances

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