BFS17P_11 datasheet(3/7 Pages) INFINEON

Part #	BFS17P

Description	NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 7 page

2011-07-20

3

BFS17P

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 2 mA, VCE = 5 V, f = 200 MHz

IC = 25 mA, VCE = 5 V, f = 200 MHz

fT

1

1.3

1.4

2.5

-

GHz

Collector-base capacitance

VCB = 5 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

-

0.55

0.8

pF

Collector emitter capacitance

VCE = 5 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

-

0.27

-

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

0.9

1.45

Minimum noise figure

IC = 2 mA, VCE = 5 V, ZS = 50 Ω,

f = 800 MHz

NFmin

-

3.5

5

dB

Transducer gain

IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,

f = 500 MHz

|S21e|2

-

13

-

dB

Third order intercept point at output

VCE = 5 V, IC = 20 mA, f = 800 MHz,

ZS = ZSopt, ZL = ZLopt

IP3

-

21.5

-

dBm

1dB compression point

IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,

f = 800 MHz

P-1dB

-

10

-

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