BSB044N08NN3G datasheet(1/11 Pages) INFINEON

Part #	BSB044N08NN3G

Description	OptiMOS?? Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSB044N08NN3 G

OptiMOS

™3 Power-MOSFET

Features

• Optimized technology for DC/DC converters

• Excellent gate charge x R DS(on) product (FOM)

• Superior thermal resistance

• Dual sided cooling

• low parasitic inductance

• Low profile (<0.7mm)

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

1) for target applications

• Compatible with DirectFET® package MN footprint and outline

2)

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

90

A

V GS=10 V, T C=100 °C

68

V GS=10 V, T A=25 °C,

R thJA=58 K/W

2)

18

Pulsed drain current

3)

I D,pulse

T C=25 °C

360

Avalanche energy, single pulse

E AS

I D=30 A, R GS=25 W

660

mJ

Gate source voltage

V GS

±20

V

1) J-STD20 and JESD22

Value

2) DirectFET® is a trademark of International Rectfier Corporation

BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation

V

DS

80

V

R

DS(on),max

4.4

m

W

I

D

90

A

Product Summary

Type

Package

Outline

Marking

BSB044N08NN3 G

MG-WDSON-2

MN

0208

CanPAKTM M

MG-WDSON-2

Rev. 2.0

page 1

2011-07-18

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