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LM3524DN Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM3524DN Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 22 page Absolute Maximum Ratings (Note 5) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 40V Collector Supply Voltage (LM2524D) 55V (LM3524D) 40V Output Current DC (each) 200 mA Oscillator Charging Current (Pin 7) 5 mA Internal Power Dissipation 1W Operating Junction Temperature Range (Note 2) LM2524D −40˚C to +125˚C LM3524D 0˚C to +125˚C Maximum Junction Temperature 150˚ Storage Temperature Range −65˚C to +150˚C Lead Temperature (Soldering 4 sec.) M, N Pkg. 260˚C Electrical Characteristics (Note 1) LM2524D LM3524D Symbol Parameter Conditions Tested Design Tested Design Units Typ Limit Limit Typ Limit Limit (Note 3) (Note 4) (Note 3) (Note 4) REFERENCE SECTION V REF Output Voltage 5 4.85 4.80 5 4.75 V Min 5.15 5.20 5.25 V Max V RLine Line Regulation V IN = 8V to 40V 10 15 30 10 25 50 mV Max V RLoad Load Regulation I L =0mAto20mA 10 15 25 10 25 50 mV Max Ripple Rejection f = 120 Hz 66 66 dB I OS Short Circuit V REF = 0 25 25 mA Min Current 50 50 180 200 mA Max N O Output Noise 10 Hz ≤ f ≤ 10 kHz 40 100 40 100 µV rms Max Long Term T A = 125˚C 20 20 mV/kHr Stability OSCILLATOR SECTION f OSC Max. Freq. R T = 1k, CT = 0.001 µF 550 500 350 kHz Min (Note 7) f OSC Initial R T = 5.6k, CT = 0.01 µF 17.5 17.5 kHz Min Accuracy (Note 7) 20 20 22.5 22.5 kHz Max R T = 2.7k, CT = 0.01 µF 34 30 kHz Min (Note 7) 38 38 42 46 kHz Max ∆f OSC Freq. Change V IN = 8 to 40V 0.5 1 0.5 1.0 % Max with V IN ∆f OSC Freq. Change T A = −55˚C to +125˚C with Temp. at 20 kHz R T = 5.6k, 5 5 % C T = 0.01 µF V OSC Output Amplitude R T = 5.6k, CT = 0.01 µF 3 2.4 3 2.4 V Min (Pin 3) (Note 8) t PW Output Pulse R T = 5.6k, CT = 0.01 µF 0.5 1.5 0.5 1.5 µs Max Width (Pin 3) Sawtooth Peak R T = 5.6k, CT = 0.01 µF 3.4 3.6 3.8 3.8 V Max Voltage www.national.com 3 |
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