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SUP75P03-08 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SUP75P03-08 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 4 page SUP/SUB75P03-08 Vishay Siliconix www.vishay.com 4 Document Number: 70772 S-05111—Rev. D, 10-Dec-99 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.3 0.6 0.9 1.2 1.5 0.6 0.9 1.2 1.5 1.8 –50 –25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) 100 10 1 VGS = 10 V ID = 30 A TJ = 25_C TJ = 150_C THERMAL RATINGS 1 10 100 0.1 1.0 10.0 Safe Operating Area Limited by rDS(on) TC = 25_C Single Pulse 1 ms 10 ms 100 ms dc, 1 s 100 ms 0 20 40 60 80 100 0 25 50 75 100 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Maximum Avalanche and Drain Current vs. Case Temperature TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V) 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 |
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