BSC0923NDI

Dual N-Channel OptiMOS™ MOSFET

Features

• Dual N-channel OptiMOS™ MOSFET

• Optimized for high performance Buck converter

• Logic level (4.5V rated)

• 100% avalanche tested

• Qualified according to JEDEC

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

2)

Parameter

Symbol Conditions

Unit

Q1

Q2

Continuous drain current

40

40

A

3)

17

32

3)

14

25

4)

10

15

Pulsed drain current

5)

160

160

Avalanche energy, single pulse

9

20

mJ

Gate source voltage

V

Power dissipation

2)

2.5

2.5

W

footprint

3)

1.0

1.0

Operating and storage temperature

°C

IEC climatic category; DIN IEC 68-1

4)

Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active

5)

See figure 3 for more detailed information.

2)

One transistor active

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is

vertical in still air.

Value

-55 ... 150

55/150/56

±20

1)

J-STD20 and JESD22

Type

Package

Marking

BSC0923NDI

PG-TISON-8

0923NDI

Q1

Q2

V

DS

30

30

V

R

DS(on),max

V

5

2.8

m

W

V

7

3.7

I

D

40

40

A

Product Summary

VPhase

Rev.2.0

page 1

2013-07-30