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CAT5411WI-10-T1 Datasheet(PDF) 5 Page - ON Semiconductor

Part # CAT5411WI-10-T1
Description  Dual Digital Potentiometer (POT)
Download  14 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT5411WI-10-T1 Datasheet(HTML) 5 Page - ON Semiconductor

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Table 5. POTENTIOMETER CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
RPOT
Potentiometer Resistance (−00)
100
kW
RPOT
Potentiometer Resistance (−50)
50
kW
RPOT
Potentiometer Resistance (−10)
10
kW
RPOT
Potentiometer Resistance (−25)
2.5
kW
Potentiometer Resistance Tolerance
+20
%
RPOT Matching
1
%
Power Rating
25C, each pot
50
mW
IW
Wiper Current
+6
mA
RW
Wiper Resistance
IW = +3 mA @ VCC = 3 V
300
W
RW
Wiper Resistance
IW = +3 mA @ VCC = 5 V
80
150
W
VTERM
Voltage on any RH or RL Pin
VSS = 0 V
GND
VCC
V
VN
Noise
(Note 4)
nV/Hz
Resolution
1.6
%
Absolute Linearity (Note 5)
RW(n)(actual)−R(n)(expected)
(Note 8)
+1
LSB
(Note 7)
Relative Linearity (Note 6)
RW(n+1)−[RW(n)+LSB]
(Note 8)
+0.2
LSB
(Note 7)
TCRPOT
Temperature Coefficient of RPOT
(Note 4)
+300
ppm/C
TCRATIO
Ratiometric Temp. Coefficient
(Note 4)
20
ppm/C
CH/CL/CW
Potentiometer Capacitances
(Note 4)
10/10/25
pF
fc
Frequency Response
RPOT = 50 kW (Note 4)
0.4
MHz
4. This parameter is tested initially and after a design or process change that affects the parameter.
5. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
6. Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a potentiometer.
It is a measure of the error in step size.
7. LSB = RTOT / 63 or (RH − RL) / 63, single pot
8. n = 0, 1, 2, ..., 63
Table 6. D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC
Power Supply Current
fSCK = 2 MHz, SO
Open Inputs = GND
1
mA
ISB
Standby Current (VCC = 5 V)
VIN = GND or VCC; SO Open
1
mA
ILI
Input Leakage Current
VIN = GND to VCC
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC
10
mA
VIL
Input Low Voltage
−1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 1.0
V
VOL1
Output Low Voltage (VCC = 3 V)
IOL = 3 mA
0.4
V


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