Document No. D16118EJ2V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SA1010

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET

©

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 2SA1010 is a mold power transistor developed for high-

voltage high-speed switching, and is ideal for use as a driver in

devices such as switching regulators, DC/DC converters, and high-

frequency power amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2334

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−100

V

Collector to emitter voltage

−100

V

Emitter to base voltage

−7.0

V

Collector current (DC)

−7.0

A

Collector current (pulse)

−15

A

Base current (DC)

−3.5

A

Total power dissipation

°C)

40

W

Total power dissipation

°C)

1.5

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%

PACKAGE DRAWING (UNIT: mm)

Pin Connection