BFP183 datasheet(2/6 Pages) INFINEON

Part #	BFP183

Description	Low Noise Silicon Bipolar RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2013-10-15

2

BFP183

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

12

-

V

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

ICES

-

100

µA

Collector-base cutoff current

VCB = 10 V, IE = 0

ICBO

-

100

nA

Emitter-base cutoff current

VEB = 1 V, IC = 0

IEBO

-

1

µA

DC current gain

IC = 15 mA, VCE = 8 V, pulse measured

hFE

70

100

140

-

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