BFP196_14 datasheet(3/6 Pages) INFINEON

Part #	BFP196

Description	Low Noise Silicon Bipolar RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 6 page

2014-04-04

3

BFP196

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 70 mA, VCE = 8 V, f = 500 MHz

fT

5

7.5

-

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

-

0.83

1.3

pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

-

0.35

-

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

3.9

-

Minimum noise figure

IC = 20 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

NFmin

-

1.3

2.3

-

dB

Power gain, maximum available1)

IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

f = 1.8 GHz

Gma

-

16.5

10.5

-

Transducer gain

IC = 50 mA, VCE = 8 V, ZS = ZL = 50Ω ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

-

13

7

-

dB

Third order intercept point at output2)

IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 0.9 GHz

IP3

-

32

-

dBm

1dB Compression point

IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 0.9 GHz

P-1dB

-

19

-

1Gma = |S21 / S12| (k-(k²-1)1/2)

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50

Ω from 0.2 MHz to 12 GHz

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