BFP540ESD_13 datasheet(6/9 Pages) INFINEON

Part #	BFP540ESD

Description	Low Noise Silicon Bipolar RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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6 / 9 page

2013-09-13

6

BFP540ESD

Power gain Gma, Gms = ƒ (VCE)

IC = 20 mA

f = parameter in GHz

0

1

2

3

4

5

6

8

10

12

14

16

18

20

22

24

26

28

V

CE

[V]

6.00GHz

5.00GHz

4.00GHz

3.00GHz

2.40GHz

1.80GHz

0.90GHz

Noise figure F =

ƒ(IC)

VCE = 3 V, f = parameter in GHz

ZS = ZSopt

0

10

20

30

40

50

60

70

80

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

f = 3GHz

f = 5GHz

f = 0.9GHz

f = 4GHz

f = 6GHz

f = 1.8GHz

I

c

[mA]

Noise figure F =

ƒ(IC)

VCE = 3V, f = 1.8 GHz

0

10

20

30

40

50

60

70

80

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

I

c

[mA]

Z

S

= 50

Ω

Z

S

= Z

Sopt

Noise figure F =

ƒ(f)

VCE = 3 V, ZS = ZSopt

0

1

2

3

4

5

6

7

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

f [GHz]

I

C

= 20mA

I

C

= 5.0mA

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BFP540ESD Datasheet(PDF) 6 Page - Infineon Technologies AG

BFP540ESD Datasheet(HTML) 6 Page - Infineon Technologies AG

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