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BFP843 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BFP843 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 26 page BFP843 Product Brief Data Sheet 7 Revision 1.0, 2013-06-19 1 Product Brief The BFP843 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is housed in an easy to use plastic package with visible leads. |
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