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TN0604 Datasheet(PDF) 2 Page - Supertex, Inc |
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TN0604 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 5 page 2 TN0604 Supertex inc. www.supertex.com Doc.# DSFP-TN0604 D080813 Electrical Characteristics (T A = 25 O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage 40 - - V V GS = 0V, ID = 2.0mA V GS(th) Gate threshold voltage 0.6 - 1.6 V V GS = VDS, ID= 1.0mA ΔV GS(th) Change in V GS(th) with temperature - -3.8 -4.5 mV/OC V GS = VDS, ID= 1.0mA I GSS Gate body leakage - - 100 nA V GS = ± 20V, VDS = 0V I DSS Zero gate voltage drain current - - 10 µA V GS = 0V, VDS = Max Rating - - 1.0 mA V DS = 0.8 Max Rating, V GS = 0V, TA = 125°C I D(ON) On-state drain current 1.5 2.1 - A V GS = 5.0V, VDS = 20V 4.0 7.0 - V GS = 10V, VDS = 20V R DS(ON) Static drain-to-source on-state resistance - 1.0 1.6 Ω V GS = 5.0V, ID = 0.75A - 0.6 0.75 V GS = 10V, ID = 1.5A ΔR DS(ON) Change in R DS(ON) with temperature - 0.5 0.75 %/OC V GS = 10V, ID = 1.5A G FS Forward transductance 500 800 - mmho V DS = 20V, ID = 1.5A C ISS Input capacitance - 140 190 pF V GS = 0V, V DS = 20V, f = 1.0MHz C OSS Common source output capacitance - 75 110 C RSS Reverse transfer capacitance - 25 50 t d(ON) Turn-on delay time - - 10 ns V DD = 20V, I D = 0.5A, R GEN = 25Ω t r Rise time - - 6.0 t d(OFF) Turn-off delay time - - 25 t f Fall time - - 20 V SD Diode forward voltage drop - 1.2 1.8 V V GS = 0V, ISD = 1.5A t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Notes: † I D (continuous) is limited by max rated Tj . Thermal Characteristics Package I D (continuous)† I D (pulsed) Power Dissipation @T A = 25 O C I DR † I DRM TO-92 0.7A 4.6A 0.74W 0.7A 4.6A Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% Pulse Generator VDD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t r INPUT INPUT OUTPUT 10V VDD R GEN 0V 0V t f |
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