PTFA091201FV4R0 datasheet(6/10 Pages) INFINEON

Part #	PTFA091201FV4R0

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 10 page

Data Sheet

6 of 10

Rev. 03.1, 2016-06-21

PTFA091201E

PTFA091201F

Confidential, Limited Internal Distribution

VDD

R3

2KV

C3

0.001µF

C2

0.001µF

Q1

BCP56

R2

1.3K V

QQ1

LM7805

C1

0.001µF

VDD

R5

5.1K V

R4

2KV

R1

1.2K V

l1

R8

10 V

DUT

RF_IN

l5

C7

0.1µF

C5

0.1µF

C4

10µF

35V

C8

0.01µF

C9

33pF

C10

33pF

R6

10 V

C12

7.5pF

C11

1.2pF

C13

0.7pF

l2

l3

l4

l8

l6

l7

C19

33pF

R7

5.1K V

C6

33pF

C24

1.0pF

C25

1.0pF

C27

33pF

L1

C14

33pF

C15

1µF

C16

10µF

50V

C18

10µF

50V

C26

2.4pF

C28

0.5pF

C17

0.1µF

L2

l9

l10

l11

l12

l13

C20

1µF

C21

10µF

50V

C22

0.1µF

C23

10µF

50V

RF_OUT

Reference Circuit

Reference circuit schematic for ƒ = 960 MHz

Circuit Assembly Information

DUT

PTFA091201E or PTFA091201F

LDMOS Transistor

PCB

0.76 mm [.030"] thick,

εr = 4.5

Rogers TMM4

2 oz. copper

Microstrip

Electrical Characteristics at 960 MHz1

Dimensions: L x W ( mm) Dimensions: L x W (in.)

l1

0.072

λ, 50.0 Ω

12.27 x 1.40

0.483 x 0.055

l2

0.115

λ, 50.0 Ω

19.53 x 1.40

0.769 x 0.055

l3

0.029

λ, 50.0 Ω

5.08 x 1.40

0.200 x 0.055

l4

0.062

λ, 7.5 Ω

9.53 x 16.15

0.375 x 0.636

l5

0.149

λ, 70.0 Ω

26.31 x 0.71

1.036 x 0.028

l6, l7

0.122

λ, 55.0 Ω

20.96 x 1.17

0.825 x 0.046

l8

0.027

λ, 7.9 Ω

4.06 x 15.24

0.160 x 0.600

l9

0.103

λ, 7.9 Ω

15.75 x 15.24

0.620 x 0.600

l10

0.072

λ, 7.9 Ω

11.02 x 15.24

0.434 x 0.600

l11

0.155

λ, 38.0 Ω

25.78 x 2.13

1.015 x 0.084

l12

0.013

λ, 50.0 Ω

2.24 x 1.40

0.088 x 0.055

l13

0.015

λ, 50.0 Ω

2.59 x 1.40

0.102 x 0.055

1Electrical characteristics are rounded.

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PTFA091201FV4R0 Datasheet(PDF) 6 Page - Infineon Technologies AG

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