PTFA092201EV4R0 datasheet(3/11 Pages) INFINEON

Part #	PTFA092201EV4R0

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFA092201E

PTFA092201F

Data Sheet

3 of 11

Rev. 03.2, 2016-06-21

2-Carrier WCDMA (high gain tune)

VDD = 30 V, IDQ = 2000 mA, ƒ = 960 MHz, 3GPP WCDMA

signal, P/A R = 8.1 dB, 10 MHz carrier spacing,

3.84 MHz bandwidth

0

5

10

15

20

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35

30

35

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45

50

Output Power (dBm)

-60

-55

-50

-45

-40

-35

-30

Efficiency

ACPR

Gain

IMD

Typical Performance (data taken in a production test fixture)

Gain & Efficiency vs. Output Power

VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz

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45

50

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60

Output Power (dBm)

0

10

20

30

40

50

60

70

Efficiency

Gain

Two-carrier WCDMA Power Sweep

VDD = 30 V, IDQ = 1600 mA, ƒ1 = 889 MHz, ƒ2 = 894,

PAR = 7.1 dB each carrier at 0.01% probability

-60

-50

-40

-30

-20

-10

0

10

20

30

40

50

Output Power (dBm)

5

10

15

20

25

30

35

Efficiency

ACPR

2-Carrier WCDMA Performance

VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA

signal, P/A R = 8.1 dB, 10 MHz carrier spacing,

3.84 MHz bandwidth

0

10

20

30

40

50

60

30

35

40

45

50

Output Power (dBm)

-60

-55

-50

-45

-40

-35

-30

Efficiency

Gain

ACPR

IMD

TCASE = 25°C

TCASE = 90°C

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PTFA092201EV4R0 Datasheet(PDF) 3 Page - Infineon Technologies AG

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