PTFB192503FLV2R0XTMA1 datasheet(2/15 Pages) INFINEON

Part #	PTFB192503FLV2R0XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 15 page

Data Sheet

2 of 15

Rev. 09.1, 2016-06-13

PTFB192503EL

PTFB192503FL

RF Characteristics (cont.)

Two-tone Measurements (tested in Infineon test fixture)

VDD = 30 V, IDQ = 1.9 A, POUT = 220 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17

18

—

dB

Drain Efficiency

hD

40

41.5

—

%

Intermodulation Distortion

IMD

—

–29

–27

dBc

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

Drain Leakage Current

VDS = 63 V, VGS = 0 V

IDSS

—

10.0

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.03

—

W

Operating Gate Voltage

VDS = 30 V, IDQ = 1.9 A

VGS

2.3

2.8

3.3

V

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Junction Temperature

TJ

200

°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C, 200 W CW)

RqJC

0.262

°C/W

Ordering Information

Type and Version

Order Code

Package Description

Shipping

PTFB192503EL V1 R0

PTFB192503ELV1R0XTMA1

H-33288-6, bolt-down

Tape & Reel, 50pcs

PTFB192503EL V1 R250

PTFB192503ELV1R250XTMA1

H-33288-6, bolt-down

Tape & Reel, 250pcs

PTFB192503FL V2 R0

PTFB192503FLV2R0XTMA1

H-34288-4/2, earless

Tape & Reel, 50pcs

PTFB192503FL V2 R250

PTFB192503FLV2R250XTMA1

H-34288-4/2, earless

Tape & Reel, 250pcs

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PTFB192503FLV2R0XTMA1 Datasheet(PDF) 2 Page - Infineon Technologies AG

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