PTFB093608FV datasheet(4/13 Pages) INFINEON

Part #	PTFB093608FV

Description	Thermally-Enhanced High Power RF LDMOS FET

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 13 page

Data Sheet

4 of 13

Rev. 04, 2012-07-24

PTFB093608FV

Typical Performance (cont.)

Broadband Circuit Impedance

Frequency

Z Source W

Z Load W

MHz

R

jX

R

jX

910

1.84

–1.74

0.89

–1.52

920

1.78

–1.73

0.86

–1.46

930

1.72

–1.72

0.83

–1.40

940

1.66

–1.71

0.81

–1.35

950

1.61

–1.69

0.79

–1.29

960

1.55

–1.66

0.77

–1.23

970

1.50

–1.64

0.75

–1.17

Z Source

Z Load

G

D

G

S

D

0

10

20

30

40

50

-60

-50

-40

-30

-20

-10

35

40

45

50

55

Output Power Avg. (dBm)

Two-carrier WCDMA 3GPP Drive-up

VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz,

3GPP WCDMA, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

Efficiency

IMD Up

IMD Low

ACPR

-55

-50

-45

-40

-35

-30

-25

-20

36

38

40

42

44

46

48

50

52

54

Output Power Avg. (dBm)

Two-carrier WCDMA 3GPP Drive-up

VDD = 28 V, IDQ = 2.8 A, 3GPP WCDMA,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

960 Lower

960 Upper

940 Lower

940 Upper

920 Lower

920 Upper

IMD Low

IMD Up

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PTFB093608FV Datasheet(PDF) 4 Page - Infineon Technologies AG

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