PTFB192503FL datasheet(5/15 Pages) INFINEON

Part #	PTFB192503FL

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 15 page

PTFB192503EL

PTFB192503FL

Data Sheet

5 of 15

Rev. 09.1, 2016-06-13

Typical Performance (cont.)

0

10

20

30

40

50

60

15

16

17

18

19

20

21

40

45

50

55

Output Power (dBm)

CW

Gain & Efficiency vs. Output Power

VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz

+85°C

+25°C

–10° C

Efficiency

Gain

17

18

19

20

40

45

50

55

Output Power (dBm)

CW Performance

Gain vs. Output Power

VDD = 30 V, ƒ = 1990 MHz

IDQ = 1.85 A

IDQ = 2.5 A

IDQ = 1.2 A

-70

-60

-50

-40

-30

-20

35

40

45

50

55

Output Power, PEP (dBm)

Intermodulation Distortion

vs. Output Power

VDD = 30 V, IDQ = 1.85 A,

ƒ1 = 1990 MHz, ƒ2 = 1989 MHz

IMD3

IMD7

IMD5

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PTFB192503FL Datasheet(PDF) 5 Page - Infineon Technologies AG

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