PTFB211501EV1R250 datasheet(3/13 Pages) INFINEON

Part #	PTFB211501EV1R250

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFB211501E

PTFB211501F

Data Sheet

3 of 13

Rev. 03.1, 2016-06-14

Typical Performance (data taken in production test fixture)

Two-tone Broadband

VDD = 30 V, IDQ = 1.20 A, POUT = 63 W

15

20

25

30

35

40

45

50

55

2070 2090 2110 2130 2150 2170 2190 2210

Frequency (MHz)

-50

-45

-40

-35

-30

-25

-20

-15

-10

Gain

Efficiency

IMD3

IRL

Two-tone Drive-up

VDD = 30 V, IDQ = 1.20 A,

ƒ1 = 2170 MHz, ƒ2 = 2169 MHz

15

16

17

18

19

40

42

44

46

48

50

52

54

Output Power, PEP (dBm)

0

10

20

30

40

50

Efficiency

Gain

Single-carrier WCDMA, 3GPP Broadband

VDD = 30 V, IDQ = 1.20 A, POUT = 40 W

15

20

25

30

35

40

45

50

2080

2100

2120

2140

2160

2180

2200

Frequency (MHz)

-45

-40

-35

-30

-25

-20

-15

-10

Efficiency

IRL

ACP

Gain

Two-tone Drive-up

VDD = 30 V, IDQ = 1.20 A,

ƒ1 = 2170 MHz, ƒ2 = 2169 MHz

-60

-50

-40

-30

-20

-10

40

42

44

46

48

50

52

54

Output Power, PEP (dBm)

5

15

25

35

45

55

Efficiency

IMD3

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PTFB211501EV1R250 Datasheet(PDF) 3 Page - Infineon Technologies AG

PTFB211501EV1R250 Datasheet(HTML) 3 Page - Infineon Technologies AG

Similar Part No. - PTFB211501EV1R250

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