PTFB210801FA datasheet(2/11 Pages) INFINEON

Part #	PTFB210801FA

Description	Thermally-Enhanced High Power RF LDMOS FET

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

2 of 11

Rev. 01.1, 2016-06-14

PTFB210801FA

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

Drain Leakage Current

VDS = 63 V, VGS = 0 V

IDSS

—

10.0

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.05

—

W

Operating Gate Voltage

VDS = 30 V, IDQ = 750 mA

VGS

2.3

3.0

3.3

V

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Junction Temperature

TJ

200

°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C, 80 W CW)

RqJC

0.50

°C/W

Ordering Information

Type and Version

Order Code

Package Description

Shipping

PTFB210801FA V1 R0

PTFB210801FAV1R0XTMA1

H-37265-2, earless flange

Tape & Reel, 50 pcs

PTFB210801FA V1 R250

PTFB210801FAV1R250XTMA1

H-37265-2, earless flange

Tape & Reel, 250 pcs

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PTFB210801FA Datasheet(PDF) 2 Page - Infineon Technologies AG

PTFB210801FA Datasheet(HTML) 2 Page - Infineon Technologies AG

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