PTFB211503EL datasheet(4/14 Pages) INFINEON

Part #	PTFB211503EL

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 14 page

Data Sheet

4 of 14

Rev. 04.1, 2016-06-14

PTFB211503EL

PTFB211503FL

0

10

20

30

40

50

15

16

17

18

19

20

40

42

44

46

48

50

52

54

Output Power, PEP (dBm)

Two-tone Drive-up

VDD = 30 V, IDQ = 1.20 A,

ƒ1 = 2170 MHz, ƒ2 = 2169 MHz

Efficiency

Gain

0

10

20

30

40

50

-65

-55

-45

-35

-25

-15

40

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44

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50

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54

Output Power, PEP (dBm)

Two-tone Drive-up

VDD = 30 V, IDQ = 1.20 A,

ƒ1 = 2170 MHz, ƒ2 = 2169 MHz

Efficiency

IMD3

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

15

20

25

30

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60

2070 2090 2110 2130 2150 2170 2190 2210

Frequency (MHz)

Two-tone Broadband Performance

VDD = 30 V, IDQ = 1.20 A, POUT = 63 W

Gain

Efficiency

IRL

IMD3

-70

-60

-50

-40

-30

-20

41

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45

47

49

51

53

Output Power, PEP (dBm)

Two-tone Drive-up at

Selected Frequencies

VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz

2170MHz

2140MHz

2110MHz

Typical Performance (cont.)

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PTFB211503EL Datasheet(PDF) 4 Page - Infineon Technologies AG

PTFB211503EL Datasheet(HTML) 4 Page - Infineon Technologies AG

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