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NUD3124D Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUD3124D
Description  Automotive Inductive Load Driver
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUD3124D Datasheet(HTML) 2 Page - ON Semiconductor

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NUD3124
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
Value
Unit
VDSS
Drain−to−Source Voltage – Continuous
(TJ = 125°C)
28
V
VGSS
Gate−to−Source Voltage – Continuous
(TJ = 125°C)
12
V
ID
Drain Current – Continuous
(TJ = 125°C)
150
mA
EZ
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80
W or Higher)
(TJ Initial = 85°C)
250
mJ
PPK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
20
W
ELD1
Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4)
(Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80
W or Higher)
(TJ Initial = 85°C)
80
V
ELD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80
W or Higher)
(TJ Initial = 85°C)
100
V
ELD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80
W or Higher)
(TJ Initial = 85°C)
300
V
Rev−Bat
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80
W or more)
−14
V
Dual−Volt
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
28
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2,000
V
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80
W, see Figure 4.
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
TA
Operating Ambient Temperature
−40 to 125
°C
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
−65 to 150
°C
PD
Total Power Dissipation (Note 5)
SOT−23
Derating above 25
°C
225
1.8
mW
mW/
°C
PD
Total Power Dissipation (Note 5)
SC−74
Derating above 25
°C
380
3.0
mW
mW/
°C
RqJA
Thermal Resistance Junction–to–Ambient (Note 5)
SOT−23
SC−74
556
329
°C/W
5. Mounted onto minimum pad board.


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