NE68039-T1 datasheet(3/19 Pages) NEC

Part #	NE68039-T1

Description	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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NE680 SERIES

MAG

|S21|2

0.1

0.2 0.3

0.5 0.7 1

2

3

5

7

10

30

25

20

15

10

5

0

1

2

3

5

7

10

20 30

50 70 100

14

13

12

11

10

9

8

7

6

5

4

3

2

VCE = 6 V

f = 2 GHz

f = 3 GHz

f = 4 GHz

Collector Current, IC (mA)

1

2

3

5

7

10

20

30

50 70 100

12

10

8

6

4

2

0

NE68033

VCE = 6 V

f = 2 GHz

NE68035

INSERTION GAIN vs.

COLLECTOR CURRENT

NE68033

INSERTION GAIN vs.

COLLECTOR CURRENT

NE68035

FORWARD INSERTION GAIN

AND MAXIMUM AVAILABLE

GAIN vs. FREQUENCY

TYPICAL PERFORMANCE CURVES (TA = 25°C)

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

V

20

VCEO

Collector to Emitter Voltage

V

10

VEBO

Emitter to Base Voltage

V

1.5

IC

Collector Current

mA

35

TJ

Junction Temperature

°C

1502

TSTG

Storage Temperature

°C

-65 to +150

Notes:

1. Operation in excess of any one of these parameters may result in

permanent damage.

2. Maximum TJ for the NE68035 is 200°C.

DC POWER DERATING CURVES

Ambient Temperature, TA (°C)

NE68035

0

50

100

150

200

400

300

200

100

0

NE68033

NE68039

NE68019

Collector Current, IC (mA)

Frequency, f (GHz)

NE68039

FORWARD INSERTION GAIN

AND MAXIMUM AVAILABLE

GAIN vs. FREQUENCY

|S21|2

VCE = 6 V

IC = 10 mA

0.1

0.2 0.3

0.5 0.7 1

2

3

5

7 10

30

25

20

15

10

5

0

MAG

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NE68039-T1 Datasheet(PDF) 3 Page - NEC

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