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BSL306N Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSL306N Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page BSL306N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=2.3 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 25 26 27 28 29 30 31 32 33 34 35 36 -60 -20 20 60 100 140 T j [°C] 6 V 15 V 24 V 0 1 2 3 4 5 6 7 8 0 1 2 3 Q gate [nC] 25 °C 100 °C 125 °C 100 101 102 103 10-1 100 101 t AV [µs] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g Rev 2.4 page 7 2013-11-06 |
Similar Part No. - BSL306N_13 |
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Similar Description - BSL306N_13 |
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